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Ahead of 1990, we are expressed had condensed matter physics investigation center. In 1990, middle launched Xiamen Powerway Sophisticated Material Co., Limited (PAM-XIAMEN), now it is actually a leading manufacturer associated with compound semiconductor material throughout China.
PAM-XIAMEN develops superior crystal growth and epitaxy technologies, range from the actual first era Germanium wafer, second creation Gallium Arsenide with espèce growth along with epitaxy about III-V si doped n-type semiconductor elements based on Georgia, Jordlag, In, As in addition to R grown by MBE or even MOCVD, to the finally generation: Silicon carbide as well as Gallium Nitride for BROUGHT and power device app.
Quality is our initial priority. PAM-XIAMEN has also been ISO9001: 2008 certified and also honored honors from China and taiwan General Government of Good quality Supervision, Evaluation and Enclosure. We have has along with shares four modern-day producers, which can provide a hefty range of qualified merchandise in order to meet different needs regarding our buyers.Welcome anyone to send inquiry, interrogation for you to our sales team in the event that you have any additional problem. Thank you!
Our Record
2011
Commercial CdZnTe (CZT) wafer are on muscle size manufacturing, which is some sort of new semiconductor, which often helps to convert radiation to help electron effectively, it will be mainly utilized in infrared thin-film epitaxy substrate, X-ray in addition to γ-ray detection, laser dvd modulation, high-performance solar tissue and other high tech career fields.
2009
PAM-XIAMEN has generated the particular manufacturing technology intended for GaN epitaxy on Sky-blue as well as freestanding GaN one amazingly wafer substrate and that is to get UHB-LED and LD. Produced by hydride fumes cycle epitaxy (HVPE) engineering, Our own GaN wafer possesses very low defect density and fewer or perhaps free macro problem solidity.
2007
PAM-XIAMEN builds up and also manufactures compound semiconductor substrates-gallium arsenide crystal along with wafer. We has used innovative crystal growth technology, top to bottom gradient freeze (VGF) in addition to GaAs wafer processing technological know-how, established a production collection from crystal growth, lowering, grinding to polishing handling and built a 100-class clean room for wafer cleaning and packaging. The GaAs wafer include 2~6 inch ingot/wafers for GUIDED, LD and Microelectronics apps. Thanks to its competence involving molecular beam epitaxy technologies (MBE) and Material Natural and organic Chemical Vapor Deposition(MOCVD), the corporation can offer entire world class epitaxial element semiconductor wafers for microwaves as well as RF applications.
04
PAM-XIAMEN has developed SiC ravenscroft growth technology and Semblable wafer processing technology, founded a production line in order to manufacturer SiC substrate connected with polytype 4H and 6H in different quality qualities with regard to researcher and sector producers, Which is employed in GaN epitaxy gadget, power gadgets, high-temperature unit and optoelectronic Devices. While a professional firm used by the leading companies from the fields associated with sophisticated and high-tech stuff analysis and state société and also China's Semiconductor Research laboratory, we live devoted to consistently improve the good quality regarding currently substates along with produce large size substrates, in addition to epitaxial technology.
2001
PAM-XIAMEN has established production series of semiconductor materials -- Ge(Germanium) One Crystals in addition to Wafers.
1990
Xiamen Powerway Advanced Stuff Co., Ltd(PAM-XIAMEN) founded. PAM-XIAMEN develops enhanced crystal expansion and epitaxy technologies, making processes, built substrates as well as semiconductor products.
1990 :
We are generally stated owned compacted subject physics research centre